[labnetwork] [EXTERNAL] Deep anisotropic etching of SiO2

[Morrison, Richard H., Jr]

Hi,



The wet etch will not work due to undercut. Has for RIE you would need a high density ICP type etch tool, I think ULVAC sells such a tool. 500um of SiO2 is a tall order good luck.



Rick





Richard Morrison

DMTS

Draper Laboratory

555 Technology Square

Cambridge Ma  02139

Office: 617-258-3420

Cell: 508-930-3461







From: labnetwork <labnetwork-bounces at mtl.mit.edu> On Behalf Of Ningzhi Xie
Sent: Wednesday, January 18, 2023 4:23 PM
To: labnetwork at mtl.mit.edu
Subject: [EXTERNAL] [labnetwork] Deep anisotropic etching of SiO2



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 Dear college,



We want to perform a highly anisotropic, very deep (~500um) etching of SiO2 with a vertical side wall. On top of the SiO2 is nanostructures protected by photoresist. The etch depth needs to be controlled with a precision of 20% (we are thinking of using another  material as the substrate underneath the SiO2 layer, which acts as an etch-stopper). The structure and dimensions are shown in the attached image. It would be very helpful if anyone has any idea of this kind of etching (either dry and wet chemical etch is fine).



Thank you very much.



Best regards,

Ningzhi Xie

Department of Electrical and Computer Engineering

University of Washington

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