RJ-68. Bahl, S.R., J. A. del Alamo, J. Dickmann, and S. Schildberg , "Off-State Breakdown in InAlAs/InGaAs MODFETs", IEEE Transactions on Electron Devices 42 , 15-22, January 1995. (paper)
RJ-69. Berthold, S., E. Zanoni, C. Canali, M. Pavesi, M. Pecchini, M. Manfredi, S.R. Bahl, and J. A. del Alamo, "Impact Ionization and Light Emission in InAlAs/InGaAs Heterostructure Field-Effect Transistors", IEEE Transactions on Electron Devices 42 (4), 752-759, April 1995. (paper)
RJ-70. Wyss, R.A., C.C. Eugster, J. A. del Alamo, M.J. Rooks, M.R. Melloch, and Q. Hu, "Far-Infrared Radiation-Induced Thermopower in a Quantum Point Contact", Applied Physics Letters 66 (9), 1144-1146, February 1995.
RJ-71. Greenberg, D.R., J. A. del Alamo, and R. Bhat, "Impact Ionization and Transport in the InAlAs/n + -InP HFET", IEEE Transactions on Electron Devices 42 (9), 1574-1582, September 1995. (paper)
RJ-72. Burstein, L., Y. Shapira, B.R. Bennett, and J. A. del Alamo, "Surface Photovoltage Spectroscopy of In x Al 1-x As Epilayers", Journal of Applied Physics 78 (12), 7163-7169, December 1995.
RC-62. del Alamo, J. A. and C.C. Eugster, "Dual Electron Waveguide Devices: the Quest for Electron Directional Coupling", (invited) International Workshop on Mesoscopic Physics and Electronics, Tokyo, Japan, March 1995; Japanese Journal of Applied Physics 34 (Part 1, No. 8B), 4439-4445, August 1995.
RC-63. del Alamo, J. A., C.C. Eugster, Q. Hu, M.R. Melloch, and M.J. Rooks, "Electron Waveguide Devices", invited paper to 8th International Conference on Superlattices, Microstructures, and Microdevices, Cincinnati, OH, August 1995; Superlattices and Microstructures 23 (1), 121-137, 1998.
RC-64. Hu, Q., S. Vergese, R. A. Wyss, Th. Schapers, J. A. del Alamo, S. Feng, K. Kubo, M. J. Rooks, M. R. Melloch and A. Forster, "High-frequency (f ~ 1 Thz) Studies of Quantum-effect Devices", (invited) 1995 International Electron Devices Research Symposium, Charlottesville, VA, December 1995, pp. 337-341.
RC-65. Somerville, M. H., J. A. del Alamo and W. Hoke, "A New Physical Model for the Kink Effect on InAlAs/InGaAs HEMTs", 1995 International Electron Devices Meeting, Washington DC , December 1995, pp. 201-204. (paper)