RJ-97. Mertens, S. D. and J. A. del Alamo, "A model for Hydrogen-induced piezoelectric effect in InP HEMTs and GaAs PHEMTs", IEEE Transactions on Electron Devices, 49 (11), 1849-1855, November 2002. (paper)
RC-91. del Alamo, J. A., J. Hardison, G. Mishuris, L. Brooks, C. McLean, V. Chang, and L. Hui, "Educational Experiments with an Online Microelectronics Characterization Laboratory." International Conference on Engineering Education 2002, Manchester (UK), August 2002. (paper)
RC-89. Chang, V, and J. A. del Alamo, "Collaborative WebLab: Enabling Collaboration in an Online Laboratory." 2002 World Congress on Networked Learning in a Global Environment, Berlin ( Germany ), May 2002.
RC-88. del Alamo, J. A., L. Brooks, C. McLean, J. Hardison, G. Mishuris, V. Chang, and L. Hui, "The MIT Microelectronics WebLab: a Web-Enabled Remote Laboratory for Microelectronics Device Characterization." 2002 World Congress on Networked Learning in a Global Environment, Berlin (Germany), May 2002. (paper)
RC-90. Mertens, S. D., J. A. del Alamo, T. Suemitsu, and T. Enoki, "Hydrogen Sensitivity of InP HEMTs with WSiN-based Gate Stack." 2002 InP and Related Materials Conference, Stockholm ( Sweden), May 2002. pp. 323-326. (paper)
RJ-96. Fiorenza, J. G. and J. A. del Alamo, "Experimental Comparison of RF Power LDMOSFETs on Thin-Film SOI and Bulk Silicon", IEEE Transactions on Electron Devices, 49 (4), 687-692, April 2002. (paper)
RJ-95. Appenzeller, J., R. Martel, Ph. Avouris, J. Knoch, J. Scholvin, J. A. del Alamo, P. Rice, and P. Solomon, "Sub-40nm SOI V-groove n-MOSFETs", IEEE Electron Device Letters, 23 (2), 100-102, February 2002. (paper)
RC-92. Fiorenza, J. G., J. Scholvin, and J. A. del Alamo, "Technologies for RF Power LDMOSFETs beyond 2 GHz: Metal/poly-Si Damascene Gates and Low-Loss Substrates."2002 IEEE International Electron Devices Meeting, San Francisco, CA. December 8-11, pp. 463-466. (paper)