[labnetwork] Help with Silicon on Sapphire

[Bob Hamilton]

Richard Everly,

A couple of decades ago I did a fair amount of work with 
sapphire substrates, bonding these to glass for optical 
windows in the DUV. For glass work I had to make sure the 
sapphire face was cut on the correct axis to assure both x 
and y directions had the same COE.

You should have no issues with chemical attack. There are no 
known liquid etchants for sapphire at standard process bath 
temps.

Si processing temps do not exceed the melting point of 
sapphire susbstrates. These substrates can be run to 1250 C 
without issue.

Assuming a reasonably thin wafer (~ 1mm) standard handling 
will not represent a thermal shock issue.

Bob Hamilton

Robert Hamilton
University of California at Berkeley
Nanolab Equipment Engineering Manager
Rm406 Cory Hall
Berkeley, CA 94720-1770
510-642-2716
510-642-2916 (Fax)
510-325-7557 (Cell)
bob at silicon2.eecs.berkeley.edu

On 8/16/2010 10:37 AM, Everly, Richard wrote:
> I have researcher that wants to grow a thermal oxide on 6000Ang epi layer on sapphire substrate. I have no experience with this material and the documentation seems to be scarce. I don't want to burn up the substrate by doing something foolish as they very expensive. any help would be greatly appreciated!
>
> 1. is this material process compatible with standard silicon processes, can I use the same tube as I do my regular dry oxidation and not worry about contamination.
>
> 2. What heat-up and cool-down rates should I use, and are there any temp limits I need to be aware of? I've read that thermal expansion can be a problem.
>
> 3. Can I use the RCA clean process? I'm worried about the SC1 solution attacking the Sapphire.
>
>
> Richard Everly
> Cleanroom Engineer
> Nanotechnology Research and Education Center (NREC)
> University of South Florida
> NREC, ENB118
> 4202 E. Fowler Ave.
> Tampa, FL 33620
>
> Office: 813-974-5365
> Fax:    813-974-3610
>
>
>
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