[labnetwork] Can we use the same chamber for both Si and III-V (GaAs, InP, GaN) etching
weidong zhou
weidong001 at hotmail.com
Tue Aug 16 23:24:58 EDT 2011
Dear Colleagues
I have one question: Can we use the same chamber for both Si and III-V (GaAs, InP, GaN, etc)? Any potential contamination issues?
Why in most places, there are two separate chambers/tools for Si and III-V etching?
Thanks.
Weidong
-------------- next part --------------
An HTML attachment was scrubbed...
URL: <https://mtl.mit.edu/pipermail/labnetwork/attachments/20110816/02119704/attachment.html>
More information about the labnetwork
mailing list