[labnetwork] Can we use the same chamber for both Si and III-V (GaAs, InP, GaN) etching
Hathaway, Malcolm
hathaway at cns.fas.harvard.edu
Fri Aug 19 09:43:59 EDT 2011
Generally not, as any residual As, P, or Ga will act as a dopant in your Si devices.
Similarly, Si is a dopant for many of these other materials.
As you noticed, most places keep them separate. Some places will not even allow both materials in the same lab.
Mac
Harvard CNS
________________________________________
From: labnetwork-bounces at mtl.mit.edu [labnetwork-bounces at mtl.mit.edu] On Behalf Of weidong zhou [weidong001 at hotmail.com]
Sent: Tuesday, August 16, 2011 11:24 PM
To: Lab Network
Subject: [labnetwork] Can we use the same chamber for both Si and III-V (GaAs, InP, GaN) etching
Dear Colleagues
I have one question: Can we use the same chamber for both Si and III-V (GaAs, InP, GaN, etc)? Any potential contamination issues?
Why in most places, there are two separate chambers/tools for Si and III-V etching?
Thanks.
Weidong
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