[labnetwork] Need RIE help

[Morrison, Richard H., Jr.]

Hi Everyone,

 

Our facility uses an STS RIE tool (100mm wafers), to etch
Nitrides/Oxides/Ti and resist cleans. I have a big problem when we use
O2 to clean off resist from wafers. It seems that just running O2 plasma
we etch 1000A/min of SiO2. It should be impossible to etch SiO2 with O2
plasma.

 

In trouble shooting we have done the following, change the Teflon wafer
holder, disconnected the SF6, CF4 and CHF3 tanks and capped the lines,
then pumped the machine down and just ran O2 and we still etched the
SiO2 at 1000A/min. We have a plasma scope and the F peak is clipped of
in height during the O2 plasma clean?

 

Does anybody have any ideas on what may be going on.

 

Thanks in advance,

Rick

 

 

 

 

Rick Morrison

Senior Member Technical  Staff 

Acting Group Leader Mems Fabrication

Draper Laboratory

555 Technology Square

Cambridge, MA  02139

 

617-258-3420

 

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