[labnetwork] Need RIE help

[Mary Tang]

Hi Richard --

A similar problem was observed and diagnosed on one of our O2 ashers by 
one of our industrial labmembers who was a plasma etch engineer at HP.  
The cause seems to have been trace amounts Fomblin pump fluid coming 
back into the chamber -- Fomblin is basically a polymerized freon, so 
there's your fluorine source.

Mary


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



On 7/27/2011 4:58 AM, Morrison, Richard H., Jr. wrote:
>
> Hi Everyone,
>
> Our facility uses an STS RIE tool (100mm wafers), to etch 
> Nitrides/Oxides/Ti and resist cleans. I have a big problem when we use 
> O2 to clean off resist from wafers. It seems that just running O2 
> plasma we etch 1000A/min of SiO2. It should be impossible to etch SiO2 
> with O2 plasma.
>
> In trouble shooting we have done the following, change the Teflon 
> wafer holder, disconnected the SF6, CF4 and CHF3 tanks and capped the 
> lines, then pumped the machine down and just ran O2 and we still 
> etched the SiO2 at 1000A/min. We have a plasma scope and the F peak is 
> clipped of in height during the O2 plasma clean?
>
> Does anybody have any ideas on what may be going on.
>
> Thanks in advance,
>
> Rick
>
> Rick Morrison
>
> Senior Member Technical  Staff
>
> Acting Group Leader Mems Fabrication
>
> Draper Laboratory
>
> 555 Technology Square
>
> Cambridge, MA  02139
>
> 617-258-3420
>
>
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