[labnetwork] ALD of SiO2 and SiN with precursors 3DMAS and BTBAS

[Vicky Diadiuk]

Hi,
 We are interested in adding SiO2 and SiN deposition capabilities to at least one of our ALD systems (specifically the Oxford FlexAL).
The system has two sets of independent precursor manifolds.  
Currently, one manifold is completely filled up with TMA, the Hf source and the W source, while the second manifold only has TiCl4 for depositing TiN and TiO2.  
The problem is that the TiCl4 source (and other such metal halide sources) is not compatible with metal amide sources and thus we can't put any metal amide precursors on the two open slots on the second precursor manifold. 

Our users are interested in depositing SiO2 and SiN by using metal amide precursors like 3DMAS and BTBAS but that requires that the TiCl4 source be replaced with a compatible Ti precursor, such as TDMAT to deposit TiN.
The precursors we are considering based on what people seem to be using at other universities and a quick literature search are:

SiO2
3DMAS/TDMAS 
BTBAS

SiN
3DMAS 

Does anyone have any experience w/them & with TDMAT?
Any recommendations or suggestions for precursors for SiO2 and SiN?

We'd like to assess all of these precursors and films with respect to:
1) Cost and availability of precursor
2) Robustness of precursor  (A precursor that degrades rapidly over time wld not be preferred)
3) Quality of film:  Electrical data would be nice but even indices of refraction would do
4) Any chemical compatibility issues.
5) Existence of recipes on the Oxford ALD tool at other places.  This will reduce the amount of optimization that we will need to do.

We really appreciate any comments you might have.
Thx,
 Vicky

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