[labnetwork] Fwd: ALD of SiO2 and SiN with precursors 3DMAS and BTBAS

[Mike Young]

Hi Vicky. See below for relevant comments from two of my esteemed colleagues, regarding our FlexAL and its sources.

--Mike

> Begin forwarded message:
> 
> From: Mark Richmond <Mark.M.Richmond.7 at nd.edu>
> 
> 
> Mike,
>    I was never informed of any manifold compatibility issues of precursors by Oxford, and Dr. Xing didn't have any objections to that either. I found that odd but the system is under vacuum and is purged well before and after recipes are executed. As you can see from Dave's screen capture we have had this setup for the last few years, although we do not perform many Titanium growths. 
> 
>    As for the SiO2 and SiN we use BDEAS in our recipes, Nitride growth is very slow though. We never purchased a BTBAS source but we did have a 3DMAS source. The 3DMAS source was used up in attempting to characterize the material and we never had a good material growth so we have not replaced that material. It used to be in the empty spot that is now on the machine.
> 
>    Vicky should be able to contact Oxford for their information sheets on different film recipes per precursor or I have in the past anyway. 
> 
> Thanks
> Mark
> 
> On Mon, Oct 12, 2015 at 2:09 PM, David Heemstra <David.Heemstra.1 at nd.edu <mailto:David.Heemstra.1 at nd.edu>> wrote:
> Mike:
> We also have two separate manifolds.  Below is a screen capture for our system.
> Maybe im missing something but - it sounds like they don't want to put TiCl4 and TMA on the same manifold?  I believe that is how ours is currently setup.
> I thought we had 3DMAS or BTBAS a long time ago - but currently Si source is BDEAS.
> Possible (if we are doing something that isn't ideal) it is OK as long as you use sufficient purges afterwards?
> Not really sure that this helps.  Mark may have a better understanding.
> Dave
> 
> 
> 
> 
> 


> On Sun, Oct 11, 2015 at 10:26 AM, mike young <mike.young at nd.edu <mailto:mike.young at nd.edu>> wrote:
> dave/mark, can you advise Vicky regarding this ALD question?
> 
> 
> 
> -------- Forwarded Message --------
> Subject:	[labnetwork] ALD of SiO2 and SiN with precursors 3DMAS and BTBAS
> Date:	Fri, 9 Oct 2015 15:56:30 -0400
> From:	Vicky Diadiuk <diadiuk at mit.edu> <mailto:diadiuk at mit.edu>
> To:	labnetwork at mtl.mit.edu <mailto:labnetwork at mtl.mit.edu>
> 
> Hi,
>  We are interested in adding SiO2 and SiN deposition capabilities to at least one of our ALD systems (specifically the Oxford FlexAL).
> The system has two sets of independent precursor manifolds.  
> Currently, one manifold is completely filled up with TMA, the Hf source and the W source, while the second manifold only has TiCl4 for depositing TiN and TiO2.  
> The problem is that the TiCl4 source (and other such metal halide sources) is not compatible with metal amide sources and thus we can't put any metal amide precursors on the two open slots on the second precursor manifold. 
> 
> Our users are interested in depositing SiO2 and SiN by using metal amide precursors like 3DMAS and BTBAS but that requires that the TiCl4 source be replaced with a compatible Ti precursor, such as TDMAT to deposit TiN.
> The precursors we are considering based on what people seem to be using at other universities and a quick literature search are:
> 
> SiO2
> 3DMAS/TDMAS 
> BTBAS
> 
> SiN
> 3DMAS 
> 
> Does anyone have any experience w/them & with TDMAT?
> Any recommendations or suggestions for precursors for SiO2 and SiN?
> 
> We'd like to assess all of these precursors and films with respect to:
> 1) Cost and availability of precursor
> 2) Robustness of precursor  (A precursor that degrades rapidly over time wld not be preferred)
> 3) Quality of film:  Electrical data would be nice but even indices of refraction would do
> 4) Any chemical compatibility issues.
> 5) Existence of recipes on the Oxford ALD tool at other places.  This will reduce the amount of optimization that we will need to do.
> 
> We really appreciate any comments you might have.
> Thx,
>  Vicky
> 
> 
> 
> 
> 

-- 
Michael P. Young                                (574) 631-3268 (office)
Nanofabrication Specialist                      (574) 631-4393 (fax)
Department of Electrical Engineering            (765) 637-6302 (cell)
University of Notre Dame                         mike.young at nd.edu
B-38 Stinson-Remick Hall
Notre Dame, IN 46556-5637

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