[labnetwork] [Non-DoD Source] (no subject)

[Pramod Karulkar]

Elemental analysis provides an incomplete picture of cross contamination in
semiconductors.  Impurity levels beyond the detection limits of   elemental
analysis techniques can have significant impact on semiconductor
properties.  Contamination should be characterized in terms of the carrier
concentrations and carrier lifetimes by using high resistance, long
carrier lifetime semiconductor wafers as the starting material.  Generally,
one cannot escape equipment induced degradation of electrical properties of
a semiconductor surface if the equipment is exposed to any contaminating
materials, no matter what precautions one takes.   Subtle contamination can
have grave consequences that manifest in device performance.

Pramod  Karulkar

On Thu, Jun 29, 2017 at 7:30 AM, Sunal, Paul D CIV USARMY RDECOM ARL (US) <
paul.d.sunal.civ at mail.mil> wrote:

> Fred,
>
> As it happens, six years ago we were in the exact situation you find
> yourself in today with the exact same model RTA.  There was concern that
> annealing PZT coated wafers (from a sol gel process) were contaminating the
> inside surfaces of our AG Heat Pulse 610 RTA.  We ran prime wafers through
> our "dirty" RTA that had seen PZT annealed at similar temperatures that you
> mentioned and through our "clean" RTA that had not seen any PZT.  Both were
> identical AG 610 RTAs.  Following this, we looked for a wide range of
> elements on and under the surface using SIMS.
>
> In the end, we found absolutely no presence of Pb on the wafer that was
> annealed in the dirty RTA.  In fact, both wafers' SIMS analysis looked
> identical.  While we could not rule out that the inside RTA surfaces were
> contaminated with Pb, this study told us that there was no cross
> contamination onto subsequent wafers annealed in that same RTA.
>
> Hope this helps.
>
> V/R,
>
> Paul Sunal Ph.D.
> Cleanroom Manager, U.S. Army Research Laboratory
> Sensors and Electron Devices Directorate (RDRL-SEE)
> 2800 Powder Mill Road, Adelphi, MD, 20783-1473
> Phone: 301-394-1374 : Mobile: 240-676-6209 : Fax: 301-394-1074
> E-mail: paul.d.sunal.civ at mail.mil
>
> -----Original Message-----
> From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces@
> mtl.mit.edu] On Behalf Of Fred Newman
> Sent: Wednesday, June 28, 2017 9:14 PM
> To: labnetwork at mtl.mit.edu
> Subject: [Non-DoD Source] [labnetwork] (no subject)
>
> All active links contained in this email were disabled. Please verify the
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>
>
> ________________________________
>
>
>
> Dear Colleagues,
>
> One of our users has expressed an interest in annealing sol gel PZT around
> 700C in an Allwin21 AW610 RTA tool.  Has anyone had experience with this
> process who could comment on setting up scavenging or abatement of
> Pb-containing volatile components from the process gas exhaust, or could
> recommend measures to avoid Pb contamination of the tool?  Any advice or
> suggestions would be most appreciated.
>
> Many thanks
> Fred
>
>
> --
>
> Fred Newman
> Research Engineer
> Washington Nanofabrication Facility (WNF) University of Washington Fluke
> Hall 115, Box 352143 office 206-616-3534 mobile 505-450-4447
> fnewman at uw.edu < Caution-mailto:fnewman at uw.edu > Caution-https://www.wnf.
> washington.edu/ < Caution-https://www.wnf.washington.edu/ >
>
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-- 
Pramod C Karulkar   Phone 503 756 1433
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