[labnetwork] Burn-off arsenic using ALD

[Jugessur, Aju S]

Hi all,

I have a user who would like to use the ALD to burn off arsenic materia (2-3 microns) on their Indinium phosphide substrate, at 300 C. Pump the arsenic away and then ALD coat Al203.
They do not want any oxidation of their samples after the removal of the arsenic, hence the suggested approach.

Can anyone please comment on this? Both from a health/safety and the technical approach. We have an Oxford Opal.

Thanks for your feedback.

Regards
Aju

Begin forwarded message:

From: "Zhang, Kailing" <kailing-zhang at uiowa.edu<mailto:kailing-zhang at uiowa.edu>>
Subject: questions about ALD
Date: March 13, 2018 at 11:35:51 AM CDT
To: "Jugessur, Aju S" <aju-jugessur at uiowa.edu<mailto:aju-jugessur at uiowa.edu>>

Hi Aju,
I have a question about 174 ALD system. We have a plan of depositing 2-3um of arsenic on our nanowire samples, then transfer them into ALD, heat them up to ~300C to burn off arsenic and let it get pumped out(by the pump on ALD), then depositing Al2O3 on nanowires. Please let me know what you think about this plan, if it is feasible. Thanks!

Kailing

Aju Jugessur, Ph.D.
Director, University of Iowa Microfabrication Facility (UIMF)
Optical Science and Technology Center
Professor Adjunct, Physics and Astronomy
University of Iowa
Office: IATL 202, Tel: 319-3532342
Labs: IATL 170, 172, 174
https://ostc.uiowa.edu/uimf






-------------- next part --------------
An HTML attachment was scrubbed...
URL: <https://mtl.mit.edu/pipermail/labnetwork/attachments/20180313/9a3e1c73/attachment.html>