[labnetwork] Sloped Sidewalls for Photoresist
Robert MacDonald
robert.j.macdon at gmail.com
Sun Dec 20 12:19:17 EST 2020
In a stepper I would say run a focus expose matrix. In your case start by changing the dose. In the image it looked like you had not reveled the Si. So a higher dose would be a start. But I do not know your resist.
In general, it will be hard to make sub micron line space features with your contact aligner. Can you access a stepper?
Thanks,
Rob
Sent from my iDidntspellcheckit
> On Dec 17, 2020, at 11:07 AM, Sa'ad H <saad_m_hassan at hotmail.com> wrote:
>
> Good Morning Everyone,
>
> I trust everyone is well. I have been working on defining lithographic features that are lines separated by trenches both of which are 800nm wide.
>
> I am getting adequate resolution, i.e, the lines are very close to spec. But the sidewalls slope significantly as can be seen in the attached picture.
>
> My wafer is fabricated as follows:
> Bare Silicon Wafer
> HMDS
> Backside Antireflective Coating (XHiRC-16)
> SPR-955 - 6000 rpm spin - PR thickness - 800nm
> Bake 90 Celsius for 90 seconds
> Exposure - 125 mJ/cm2 in a contact aligner
> Development 1 minute with ultrasonic
>
>
>
> <image.png>
>
>
> Does anyone know how I can achieve nice vertical sidewalls?
>
>
> Cheers,
> Sa'ad
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