[labnetwork] Deep anisotropic etching of SiO2

[Greg Allion]

That is a very tall order even for a facility with a deep glass etcher.
Depending on the application, you may want to consider using SU-8. It's
obnoxious to work with at that thickness, but it would work.
I'd be happy to provide more information if you think this may be an option.
Best,
Greg

On Wed, Jan 18, 2023 at 4:52 PM Ningzhi Xie <nzxie at uw.edu> wrote:

>  Dear college,
>
> We want to perform a highly anisotropic, very deep (~500um) etching of
> SiO2 with a vertical side wall. On top of the SiO2 is nanostructures
> protected by photoresist. The etch depth needs to be controlled with a
> precision of 20% (we are thinking of using another  material as the
> substrate underneath the SiO2 layer, which acts as an etch-stopper). The
> structure and dimensions are shown in the attached image. It would be very
> helpful if anyone has any idea of this kind of etching (either dry and wet
> chemical etch is fine).
>
> Thank you very much.
>
> Best regards,
> Ningzhi Xie
> Department of Electrical and Computer Engineering
> University of Washington
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-- 
Greg Allion
NC State University Nanofabrication Facility (NNF)
Process Integration Engineering Manager

Monteith Research Center
2410 Campus Shore Drive rm.243E
Raleigh, NC 27606
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