[labnetwork] Deep anisotropic etching of SiO2

[Lian, Yaguang]

Hello Ningzhi,

It is extremely hard to finish this process by using the etch machines. I have some descriptions of SiO2 etching. They can be found in my book. Please see the link below:

Semiconductor Microchips and Fabrication: A Practical Guide to Theory and Manufacturing: Lian, Yaguang: 9781119867784: Amazon.com: Books<https://www.amazon.com/Semiconductor-Microchips-Fabrication-Practical-Manufacturing/dp/1119867789/ref=sr_1_1?crid=2VVS3G261R22A&keywords=yaguang+lian&qid=1674147165&sprefix=%2Caps%2C293&sr=8-1>

Good luck,

Yaguang Lian

From: labnetwork <labnetwork-bounces at mtl.mit.edu> On Behalf Of Ningzhi Xie
Sent: Wednesday, January 18, 2023 3:23 PM
To: labnetwork at mtl.mit.edu
Subject: [labnetwork] Deep anisotropic etching of SiO2

 Dear college,

We want to perform a highly anisotropic, very deep (~500um) etching of SiO2 with a vertical side wall. On top of the SiO2 is nanostructures protected by photoresist. The etch depth needs to be controlled with a precision of 20% (we are thinking of using another  material as the substrate underneath the SiO2 layer, which acts as an etch-stopper). The structure and dimensions are shown in the attached image. It would be very helpful if anyone has any idea of this kind of etching (either dry and wet chemical etch is fine).

Thank you very much.

Best regards,
Ningzhi Xie
Department of Electrical and Computer Engineering
University of Washington
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