[labnetwork] Question regarding amorphous Si deposition

[Carlos Gramajo]

Hi Zhu,

I have done 1 µm films of amorphous Si in an e-beam evaporation chamber.  I
had some issues with delamination when I was growing it. What I had to do
was to slow down the rate of deposition. Unfortunately that means you have
longer deposition times, therefore more exposure to radiative heat from
the source. In that chamber we did not have a thermocouple on the sample
holder and we didn't know what was the max temperature reached.
It may be worth trying if you have a way to measure T and see if you can
keep that in check by growing it in stages with cooling times in between.

I hope this helps,

Cheers,

Carlos

On Fri, May 26, 2023 at 6:57 AM Zhu Yunxuan <yxzhuphys245 at gmail.com> wrote:

> Hi everyone,
>
> Is there a way to deposit thick amorphous Si on several micrometres
> scale(~5um or above) but with a low processing temperature (<150 deg C)?
> PECVD is one possibility but the typical operating substrate temperature is
> too high (>200 deg C) which will destroy our device.
>
> Best regards,
> Longji Cui
>
> University of Colorado Boulder
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-- 
Carlos Gramajo
Cleanroom Research Scientist
Shared Equipment Authority (SEA), Rice University
Cell: 713-743-8115; Office: 713-348-8243; cg70 at rice.edu
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