[labnetwork] Working Jeol SEM For Sale

[Michael Silva]

All:


The UCSB Nanofab has a used Jeol 7600F SEM for sale. The gun has low hours
on it and has plenty of life left. We are looking to get $50K but will
entertain reasonable offers.


*Detailed Specifications*

*Imaging*

   - Resolution:


   - 5nm under optimal conditions at 15kV SEM mode


   - Magnification:


   - SEM: x100 (at WD 25mm) to x1,000,000 (at WD 8mm)
      - Low-Mag LM mode: x25 to x19,000


   - Imaging Modes/Detectors:


   - SEI: secondary electron imaging
      - LM: Low-magnification mode
      - GB: Gentle-Beam mode


   - Applies negative voltage to the sample stage to increase effective
         acceleration without increasing beam acceleration (reducing charging).


   - LABE: Low-Angle Backscatter Electron detector


   - Inserts between the objective lens and the sample
         - Strong contrast between materials


   - LEI: Lower Electron Detector


   - Detector is lower on chamber, creating strong topographical contrast.


   - Accelerating Voltages:


   - SEM: 0.5 to 30kV
      - GB: 0.1 to 2.0kV


   - Beam Currents: 10-13 to 2x10-7 A

*Mechanical*

   - Max Sample Size: 4-inch wafer
   - Stage movement:


   - max: 70 x 50mm
      - 4-inch wafer: limited to ~25x25mm movement area from wafer center.


   - Tilt: -5° to +70°
   - Rotation: 360°
   - Specimen holders :


   - Copper and XYZ Carbon tape available
      - 4-inch wafer with topside clips
      - 1-inch holder for 30°/90°, 45°/90° mounting with tape or clips.

Electron detection:

   - *SEI*: in-lens secondary electron detector for high-resolution imaging.


   - r-filter to select electron energies to pass through to the SEI
      detector for image enhancement.


   - *LEI*: lower, in-chamber secondary electron detector for enhanced
   topographical contrast; very helpful with charging substrates.
   - *LABE*: insertable, in-chamber *l*ow-*a*ngle *b*ackscattered *e*lectron
   detector for atomic number imaging contrast
   - *Mixed*: can combine inputs from the 3 detectors above to get a more
   detailed overall image contrast.



Imaging Modes:

   - *Gentle Beam*: substrate biasing up to -2kV for lower net beam
   voltages at the substrate.  This effect directly reduces insulator charging
   issues when imaging.
   - *SEM*: regular, hi-resolution imaging mode (up to 1,000,000X mag)

*LM*: low magnification (down to 25X mag) used for finding regions of
interest on the substrate.

Regards,

Mike Silva
Operations Manager
ESB Nanofab
The University of California Santa Barbara
Office: (805) 893-3096
Cell:    (805) 245-9356
Fax:    (805) 893-7210
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