[labnetwork] Forming gas: 5% or 10% hydrogen

[Dan P. Woodie]

Everyone,

Apologies for sending this email without letting my brain finish recovering from my recent cold, and kudos to Tom Eken for pointing out my error. I have the concentrations in nitrogen and argon reversed. Above 5.5% in nitrogen is flammable and 2.9% in argon.


Dan



Daniel Woodie

Director, Micro/Nano Fabrication Center, Princeton Materials Institute

________________________________
From: labnetwork <labnetwork-bounces at mtl.mit.edu> on behalf of Dan P. Woodie <daniel.woodie at princeton.edu>
Sent: Thursday, February 29, 2024 4:35:11 PM
To: labnetwork at mtl.mit.edu <labnetwork at mtl.mit.edu>
Subject: Re: [labnetwork] Forming gas: 5% or 10% hydrogen


I can’t offer anything with regards to the efficacy of a given percentage of hydrogen for the semiconductor annealing benefits, but one other item to consider is that hydrogen greater than 2.9% in nitrogen is rated as flammable, while you can go up to 5.9% in argon and still remain nonflammable. Depending on your local fire codes and regulations, that may make a difference.



Additionally, some researchers prefer argon over nitrogen to avoid any risk of a nitrogen reaction with their substrate.



Dan



Daniel Woodie

Director, Micro/Nano Fabrication Center, Princeton Materials Institute



From: labnetwork <labnetwork-bounces at mtl.mit.edu> On Behalf Of Jing Guo
Sent: Thursday, February 29, 2024 3:17 PM
To: Golan Tanami <golant at savion.huji.ac.il>
Cc: labnetwork at mtl.mit.edu
Subject: Re: [labnetwork] Forming gas: 5% or 10% hydrogen



Hi Mario,



We also use 5% H2 in N2 as our forming gas on RTP system.





Jing

---------------------------------------

Jing Guo Ph.D.

Research Scientist

SEA Cleanroom (SST 017)

Rice University

Houston, TX

jeanne.guo at rice.edu<mailto:jeanne.guo at rice.edu>

713-348-8227













On Feb 29, 2024, at 6:35 AM, Golan Tanami <golant at savion.huji.ac.il<mailto:golant at savion.huji.ac.il>> wrote:



Hi Mario,



I don’t know about “the best”, but in our RTA, we use 5% H2 and 95% N2. I think it’s pretty standard.



Anyway, nobody complained yet ??



Best regards,



Golan.



<image001.jpg>

Golan A. Tanami, PhD | Head of the Unit for Nanofabrication (UNF)



Center for Nanoscience and Nanotechnology

Edmond J. Safra Campus
The Hebrew University of Jerusalem
T +972.2.6584179 | M +972.50.9891111
golant at savion.huji.ac.il<mailto:golant at savion.huji.ac.il>

follow us on Facebook<https://www.facebook.com/hujinanocenter/> @hujinanocenter





From: labnetwork <labnetwork-bounces at mtl.mit.edu<mailto:labnetwork-bounces at mtl.mit.edu>> On Behalf Of Beaudoin, Mario
Sent: Tuesday, February 27, 2024 10:27 PM
To: labnetwork at mtl.mit.edu<mailto:labnetwork at mtl.mit.edu>
Subject: [labnetwork] Forming gas: 5% or 10% hydrogen



Dear Network,

We're setting up a new RTA and will run it with Ar, N2 and forming gas.  We're uncertain about the % level of hydrogen we want in our forming gas.  Can someone recomment the best hydrogen % to use for MOS capacitor annealing?

Regards,

Mario

--
<image002.jpg>

_______________________________________________
labnetwork mailing list
labnetwork at mtl.mit.edu<mailto:labnetwork at mtl.mit.edu>
https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork


-------------- next part --------------
An HTML attachment was scrubbed...
URL: <https://mtl.mit.edu/pipermail/labnetwork/attachments/20240301/abeeb7f8/attachment.html>